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product specification www.jmnic.com silicon npn power transistors 2SD1409 description ? with to-220f package ? high dc current gain ? monolithic construction with built-in base-emitter shunt resistor applications ? igniter applications ? high volitage switching applications pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220f) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector -emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 6 a i b base current 1 a t c =25 ?? 25 p c collector power dissipation t a =25 ?? 2.0 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jm nic
product specification www.jmnic.com jm nic silicon npn power transistors 2SD1409 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =10ma; i b =0 400 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.04a 2.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.04a 2.5 v v ecf emitter-collector forward voltage i e =4a; i b =0 3.0 v i cbo collector cut-off current v cb =100v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 3 ma h fe-1 dc current gain i c =2a ; v ce =2v 600 h fe-2 dc current gain i c =4a ; v ce =2v 100 c ob collector output capacitance f=1mhz ; v cb =50v;i e =0 35 pf switching times t on turn-on time 1 | s t stg storage time 8 | s t f fall time i b1 =-i b2 =0.04a v cc =100v ,r l =25 |? 5 | s
product specification www.jmnic.com jm nic silicon npn power transistors 2SD1409 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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